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A 2.4-GHz/5-GHz CMOS low noise amplifier with high-resistivity ELTRAN(R) SOI-Epi/sup TM/ wafers

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8 Author(s)
Kodate, J. ; NTT Telecommun. Energy Labs., Kanagawa, Japan ; Ugajin, M. ; Tsukahara, T. ; Douseki, T.
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The performance of radio frequency integrated circuits (RFICs) in silicon-on-insulator (SOI) technology can be improved by using a high-resistivity SOI substrate. We investigated the correlation between substrate resistivity and the performance of a low noise amplifier (LNA) on ELTRAN SOI-Epi wafers, whose resistivity can be controlled precisely. The use of high-resistivity ELTRAN wafers improves the Q-factor of spiral inductors, and increases the gain and narrows the bandwidth of the LNA.

Published in:

Microwave Symposium Digest, 2002 IEEE MTT-S International  (Volume:3 )

Date of Conference:

2-7 June 2002

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