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Intrinsic noise characteristics of AlGaN/GaN HEMTs

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4 Author(s)
Sungjae Lee ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Tilak, V. ; Webb, K.J. ; Eastman, L.F.

Intrinsic noise sources and their correlation in AlGaN/GaN HEMTs are extracted and studied. Using three noise parameters obtained from microwave noise measurements and S-parameter data, two intrinsic noise sources and their correlation are specified by applying a noise deembedding technique, and their dependence on frequency and bias point is investigated.

Published in:

Microwave Symposium Digest, 2002 IEEE MTT-S International  (Volume:3 )

Date of Conference:

2-7 June 2002