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Design and analysis of a multi-layer transformer balun for silicon RF integrated circuits

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3 Author(s)
H. Y. D. Yang ; Broadcom Corp., El Segundo, CA, USA ; L. Zhang ; J. A. Castaneda

In this paper, we present the design and analysis of an on-chip transformer balun for silicon RFICs. Both the primary and secondary spread over four metal layers along a common symmetric axis to reduce the overall area, maintaining reasonable quality factor. A five port transformer balun circuit model is developed to facilitate the device simulation. A 4:11 transformer balun is fabricated and tested. It is ideal for LNAs to enhance the gain with optimum noise figure.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Date of Conference:

3-4 June 2002