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Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator

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10 Author(s)
Bary, L. ; Lab. d'Autom. et d'Anal. des Syst., CNRS, Toulouse, France ; Cibiel, G. ; Telliez, I. ; Rayssac, J.
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This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a nonlinear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Date of Conference:

3-4 June 2002