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Low-frequency noise figures-of-merit in RF SiGe HBT technology

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7 Author(s)
Jin Tang ; Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA ; Guofu Niu ; Zhenrong Jin ; Cressler, J.D.
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We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cutoff frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Date of Conference:

3-4 June 2002

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