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Predicting switched-bias response from steady-state irradiations MOS transistors

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3 Author(s)
Fleetwood, D.M. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Winokur, P.S. ; Riewe, L.C.

A novel semiempirical model of radiation-induced charge neutralization is presented. This model is combined with 12 heuristic guidelines derived from studies of oxide- and interface-trap charge (ΔVot and ΔVit) buildup and annealing to develop a method to predict MOS switched-bias response from steady-state irradiations, with no free parameters. For n-channel MOS devices, predictions of ΔVot, ΔVit, and mobility degradation differ from experimental values through irradiation by less than 30% in all cases considered. This is demonstrated for gate oxides with widely varying ΔVot and ΔVit and for parasitic field oxides. Preliminary results suggest that n-channel MOS ΔVot annealing and ΔVit buildup following switched-bias irradiation and through switched-bias annealing also may be predicted with less than 30% error. The p-channel MOS response at high frequencies (>1 kHz) is more difficult to predict

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Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )