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Radiation induced defects in CVD-grown 3C-SiC

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6 Author(s)

Radiation-induced defects in 3C-SiC epitaxially grown by a chemical vapor deposition method were studied with the electron spin resonance (ESR) technique. A 15-line ESR spectrum was observed in 2-MeV proton and 1-MeV electron irradiated 3C-SiC when the magnetic field was applied parallel to the <100> axis. This spectrum, T1, which has an isotropic g-value of 2.0029±0.0001, was interpreted by simultaneous hyperfine interactions of a paramagnetic electron with the surrounding 13C at four carbon sites and 29Si at 12 silicon sites. The T1 spectrum appeared to arise from a point defect at a silicon site. The observed hyperfine interactions with neighboring 13C and 29Si nuclei are discussed in terms of a simple molecular-orbital treatment of the defect

Published in:

Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )

Date of Publication:

Dec 1990

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