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Full wave analysis of isolated pockets to improve isolation performances in silicon based technology

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4 Author(s)
Bajon, D. ; SUPAERO, Toulouse, France ; Wane, S. ; Baudrand, H. ; Gamand, P.

This paper presents a versatile full wave analysis tool in which isolation pockets in IC's are readily introduced to perform intensive EM simulation including efficient introduction of via interconnects through metal levels. The obtained results are favorably compared to recent experimental published results.

Published in:

Microwave Symposium Digest, 2002 IEEE MTT-S International  (Volume:2 )

Date of Conference:

2-7 June 2002