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Effect of radiation-induced charge on 1/f noise in MOS devices

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2 Author(s)
Meisenheimer, T.L. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Fleetwood, D.M.

The 1/f noise in MOS transistors is measured as a function of gate and drain bias, total ionizing dose, and postirradiation biased annealing time. The transistors tested varied in size, radiation hardness, and process technology. The radiation-induced 1/f noise correlates strikingly with the oxide trap charge through irradiation and anneal, but not with interface-trap charge, for frequencies up to 10 kHz. This implies that oxide trapped charge is the predominant factor which leads to the increased 1/f noise in irradiated MOS devices

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Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )