By Topic

Modeling the anneal of radiation-induced trapped holes in a varying thermal environment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
P. J. McWhorter ; Sandia Nat. Lab., Albuquerque, NM, USA ; S. L. Miller ; W. M. Miller

The anneal of radiation-induced trapped holes in MOS transistors is found to be thermally activated. A quantitative, physical model based on thermal emission and tunneling is developed. It accurately predicts the anneal of radiation-induced trapped holes in constant or time-varying thermal environments. Data are presented which quantitatively verify the accuracy of the model for temperatures between 25 and 160°C. This model provides the basis for developing accurate quantitative screens for the rebound failure mechanism

Published in:

IEEE Transactions on Nuclear Science  (Volume:37 ,  Issue: 6 )