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Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

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6 Author(s)
Shaneyfelt, M.R. ; Sandia Nat. Lab., Albuquerque, NM, USA ; Schwank, J.R. ; Fleetwood, D.M. ; Winokur, P.S.
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The electric field dependence of radiation-induced oxide- and interface-trap charge (ΔVot and ΔV it) generation for polysilicon- and metal-gate MOS transistors is investigated at electric fields (Eox) from -4.2 MV/cm to +4.7 MV/cm. If electron-hole recombination effects are taken into account, the absolute value of ΔVot and the saturated value of ΔVit for both polysilicon- and metal-gate transistors are shown to follow an approximate E-1/2 field dependence for E ox⩾0.4 MV/cm. An E-1/2 dependence for the saturated value of ΔVit was also observed for negative-bias irradiation followed by a constant positive-bias anneal. The E-1/2 field dependence observed suggests that the total number of interface traps created in these devices may be determined by hole trapping near the Si/SiO2 interface for positive-bias irradiation or near the gate/SiO2 interface for negative bias irradiation, though H+ drift remains the likely rate-limiting step in the process. Based on these results, a hole-trapping/hydrogen transport model-involving hole trapping and subsequent near-interfacial H+ release, transport, and reaction at the interface-is proposed as a possible explanation of ΔVit buildup in these polysilicon- and metal-gate transistors

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Nuclear Science, IEEE Transactions on  (Volume:37 ,  Issue: 6 )