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Temperature sensor applications of diode-connected MOS transistors

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2 Author(s)
Filanovsky, I.M. ; Alberta Univ., Edmonton, Alta., Canada ; Su Tam Lim

The transconductance characteristics of a MOS transistor realized in a submicron technology have the zero-temperature coefficient (ZTC) bias point. The gate-source voltage of such transistor is linearly dependent on temperature when the transistor is diode-connected and biased by a current source. The slope of the dependence is related to the bias current value, and can be positive, negative or zero. Hence, the diode-connected transistor can be used as a controllable temperature sensor. This conclusion was experimentally verified using a circuit designed for 0.18 μm CMOS technology.

Published in:

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on  (Volume:2 )

Date of Conference:

2002