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A monolithic radio frequency power amplifier for 2-2.6 GHz has been realized in a standard 25 GHz-fT Si-bipolar production technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching and operates at supply voltages as low as 1 V. A new type of microstrip line balun acts as output matching network. At 1 V, 2.4 V, 3 V supply voltages output powers of 19 dBm, 27.5 dBm, 29.1 dBm are achieved at 2.45 GHz. The respective power added efficiency is 38%, 45%, 46%. The small-signal gain is 35 dB.