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38 GHz low-power static frequency divider in SiGe bipolar technology

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5 Author(s)
Ritzberger, G. ; Infineon Technol. AG, Munich, Germany ; Bock, J. ; Knapp, H. ; Treitinger, L.
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A low-power static frequency divider manufactured in 0.4 μm/85 GHz-fT SiGe bipolar technology with division ratios of 16 and 256 is presented. The circuit is optimized for low power consumption and operates up to 38.9 GHz maximum input frequency consuming only 174 mW from the 3 V supply.

Published in:

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on  (Volume:4 )

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