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Heavy ion irradiation on silicon strip sensors for GLAST

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12 Author(s)

We investigated the damage of silicon strip sensors due to heavy-ion radiation, as a check of the in-orbit stability of silicon strip sensors under cosmic-ray irradiation in the 5 year GLAST mission. In order to study single-event effects (SEE), we used Fe ions slowed-down in an absorber, with a resulting LET of 8 MeV/(mg/cm2) on the surface of the sensor. The total doses achieved in two runs were about 8 krd and 22 krd, corresponding to a fluence of about 5*107 and 1.5*108 ions/cm2, respectively. Silicon strip sensor with two different crystal orientations, <111> and <100>, were irradiated. We measured leakage currents and capacitances before and after irradiation to evaluate the damage. The leakage current was found to increase by about 10 nA/cm2/krd, as expected for the ionizing irradiation. No significant changes of capacitances were found. In addition, no coupling capacitors were broken. The observed effects are well within the in-orbit requirements of the GLAST mission.

Published in:

Nuclear Science Symposium Conference Record, 2001 IEEE  (Volume:1 )

Date of Conference:

4-10 Nov. 2001