By Topic

Heavy ion irradiation on silicon strip sensors for GLAST

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)

We investigated the damage of silicon strip sensors due to heavy-ion radiation, as a check of the in-orbit stability of silicon strip sensors under cosmic-ray irradiation in the 5 year GLAST mission. In order to study single-event effects (SEE), we used Fe ions slowed-down in an absorber, with a resulting LET of 8 MeV/(mg/cm2) on the surface of the sensor. The total doses achieved in two runs were about 8 krd and 22 krd, corresponding to a fluence of about 5*107 and 1.5*108 ions/cm2, respectively. Silicon strip sensor with two different crystal orientations, <111> and <100>, were irradiated. We measured leakage currents and capacitances before and after irradiation to evaluate the damage. The leakage current was found to increase by about 10 nA/cm2/krd, as expected for the ionizing irradiation. No significant changes of capacitances were found. In addition, no coupling capacitors were broken. The observed effects are well within the in-orbit requirements of the GLAST mission.

Published in:

Nuclear Science Symposium Conference Record, 2001 IEEE  (Volume:1 )

Date of Conference:

4-10 Nov. 2001