Referenced Items are not available for this document.
50 nm long MOSFETs with side-gates were optimised in terms of the side-gate length and successfully fabricated with conventional MOS technology. The simulated and fabricated 50 nm long MOSFET shows a reasonable subthreshold swing of 81 mV/dec and a low drain induced barrier lowering of 77 mV
Published in:
Electronics Letters
(Volume:38
,
Issue:
11
)
Date of Publication: 23 May 2002
- Page(s):
- 526 - 527
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7291635
- Digital Object Identifier :
- 10.1049/el:20020365
- Date of Current Version :
- 07 August 2002
- Issue Date :
- 23 May 2002
- Sponsored by :
- Institution of Engineering and Technology
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