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Device modeling and simulations toward sub-10 nm semiconductor devices

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3 Author(s)
Sano, N. ; Inst. of Appl. Phys., Univ. of Tsukuba, Japan ; Hiroki, A. ; Matsuzawa, K.

This paper overviews the fundamental problems encountered in device modeling and simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs). We focus on the two fundamental problems: the quantum effects and the effects associated with the long-range Coulomb potential. It is pointed out that these problems are profoundly related to the basic principles of device physics and even pose a question on the validity of the basic transport equation which the present device simulations are based on. We also review various approaches and methods taken to tackle those problems

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Nanotechnology, IEEE Transactions on  (Volume:1 ,  Issue: 1 )