By Topic

The modeling of thin-film bulk acoustic wave resonators using the FDTD method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ki-Wone Seo ; China Joint Venture Lab., Mobile Handsets Co., Kyonggido, South Korea ; Saehoon Ju ; Hyeongdong Kim

The finite-difference time-domain (FDTD) technique has been applied to analyze electromechanical phenomena of thin-film bulk acoustic wave resonators (TFBARs) for the first time. To simulate several TFBARs that have one-dimensional (1-D) piezoelectric material variations, current-driven governing equations are discretized in spatial and temporal domain. The impedance characteristics are obtained by the proposed method and compared with the analytical solutions of the 1-D Mason model. Also, the values of lumped elements for the Butterworth Van Dyke (BVD) equivalent circuit are extracted. The results show that the proposed scheme has the potential to analyze the characteristics of arbitrary piezoelectric material embedded structures.

Published in:

IEEE Electron Device Letters  (Volume:23 ,  Issue: 6 )