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This letter reports a. new excimer laser annealing (ELA) method to produce large polycrystalline silicon (poly-Si) lateral grains exceeding 4 /spl mu/m. A selectively floating amorphous silicon (a-Si) flint with a 50 nm-thick air-gap was irradiated by a single-pulse XeCl excimer laser and uniform lateral grains were grown due to the lateral thermal gradient caused by the low thermal conductivity of the air. A poly-Si thin-film transistor (TFT) with two high-quality 4.6 /spl mu/m-long lateral grains was fabricated by employing the proposed ELA and high field-effect mobility of 331 cm/sup 2//Vsec was obtained due to. the high-quality grain structure.
Date of Publication: June 2002