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Integration of RF analog functions with CMOS digital circuits offers great advantages in terms of cost and performance. Plasma-charging damage is known to degrade MOSFET characteristics and can be expected to impact the RF performance as well. In this work, we present for the first time a thorough investigation of the impact of plasma-charging damage on the RF characteristics of deep-submicron MOSFET. Our result shows that, with ultra-thin gate oxide, a 400/spl deg/C forming gas annealing can completely recover the RF performance degradation due to plasma-charging damage.