Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Jimnez, A. ; Departamento de Ingenieria Electronica, Univ. Politecnica de Madrid, Spain ; Buttari, D. ; Jena, D. ; Coffie, R.
more authors

Successive reactive ion etchings (RIE) were performed on the access regions of p/sup +/-n GaN JFETs. A decrease in the n-layer sheet resistance, with a consequent increase in I/sub DSS/ was detected after complete removal of the p-layer, due to a reduction in the n-layer depletion region. An increase in RF-dispersion was experienced, as a result of the progressive reduction of screening from surface-states originally provided by the overlying p-cap layer. No dispersion was detected before cap removal. A continuous increase in f/sub t/ and f/sub max/ was detected even before complete removal of the p-layer, due to virtual gate length reduction. It is expected that an optimized p-doped overlayer will provide current slump suppression without degradation in cutoff frequency or breakdown.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 6 )