Referenced Items are not available for this document.
A new method to determine MOSFET effective channel length and parasitic source/drain series resistance is presented in this paper. Compared to previously reported methods, the one presented here allows the determination of these parameters simultaneously and as a function of gate voltage. The method is based on the iterative solution of a derived linear-region drain current relation. The method is validated with experimental data taken from submicron LDD MOSFETs, and compared with several previously published methods.
Published in:
Devices, Circuits and Systems, 2002. Proceedings of the Fourth IEEE International Caracas Conference on
Date of Conference: 2002
- Page(s):
- D011-1 - D011-5
- Print ISBN:
- 0-7803-7380-4
- INSPEC Accession Number:
- 7374378
- Digital Object Identifier :
- 10.1109/ICCDCS.2002.1004025
- Product Type:
- Conference Publications
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