By Topic

A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Qiang Chen ; Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA ; B. Agrawal ; J. D. Meindl

A general analytical subthreshold swing (S) model for symmetric DG MOSFETs is derived using evanescent-mode analysis. Through a concept of effective conducting path, it explains a unique doping concentration (N A) dependence of S, providing a unified understanding of previous S models and leading to a new improved S model for undoped DG MOSFETs. Compact, explicit expressions of a scale length are derived, which expedite projections of scalability of DG MOSFETs and its requirement

Published in:

IEEE Transactions on Electron Devices  (Volume:49 ,  Issue: 6 )