By Topic

Excess carrier density and forward voltage drop in trench insulated gate bipolar transistor (TIGBT)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hyoung-Woo Kim ; Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea ; Min-Su Kim ; Yearn-Ik Choi ; Sang-Koo Chung

Decrease in the forward voltage drop due to the enhanced carrier density at the cathode side of the trench insulated gate transistor (TIGBT) is studied as a function of the aspect ratio between the accumulation layer and cell size as well as the applied gate voltage and compared with those for the planar DMOS-IGBT. Based on analytical expressions for hole density distribution in the lateral and vertical directions in the proximity of the reverse biased cathode junction, the current gain for the pnp transistor action is determined. The analytical results show a fair agreement with the numerical simulations using MEDICI.

Published in:

Microelectronics, 2002. MIEL 2002. 23rd International Conference on  (Volume:1 )

Date of Conference: