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Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

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7 Author(s)
Ishii, K. ; NTT Photonics Labs., NTT Corp., Kanagawa, Japan ; Murata, K. ; Ida, M. ; Kurishima, K.
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A selector integrated circuit (IC) as a benchmark to assess the performances of new undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been designed and fabricated. Operation of the selector gate at 86 Gbit/s has been achieved using an HBT developed by the authors, which exhibits the fT of 140 GHz and fmax of 200 GHz at a collector current density of 50 kA/cm2. This indicates that InP/InGaAs HBTs have excellent speed performance for making ultra-high-speed ICs with data rates approaching 100 Gbit/s

Published in:

Electronics Letters  (Volume:38 ,  Issue: 10 )