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An HDR CMOS image sensor with spiking pixels, pixel-level ADC, and linear characteristics

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4 Author(s)
Doge, J. ; Chair of Electron. Devices & Integrated Circuits, Technische Univ. Dresden, Germany ; Schonfelder, G. ; Streil, G.T. ; Konig, A.

A high dynamic range (HDR) CMOS image sensor architecture based on spiking pixel cells and its first implementation, a linear 128-pixel sensor, is presented. The pulse rate of the pixel cell is proportional to the local light intensity. The pixel cell features a pixel-level analog-to-digital (A/D) conversion by pulse counting. It allows one to tradeoff conversion precision versus frame rate. Sample sensor chips have been manufactured using a 0.8-μm double metal CMOS technology, and the test results confirming the feasibility of the chosen approach are reported

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Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on  (Volume:49 ,  Issue: 2 )