Formation and characteristics of the Si-O-C-H composite films with low dielectric constant deposited by O/sub 2//BTMSM-ICPCVD

Si-O-C-H composite films were deposited using a radio frequency inductively coupled plasma chemical vapor deposition (ICPCVD) system with a BTMSM precursor and oxygen gases. FTIR spectroscopy and XPS spectra were used to investigate the bonding configurations such as Si-O-Si, Si-O-C and Si-CH/sub 3/ bonds in the films. From the changes in the FTIR and XPS spectra between the as-deposited and annealing film, we infer that the attachment of the Si-O-Si ring link with CH/sub 3/ groups is useful for forming a nano-sized void in the film. It can be explained to obtain a lower dielectric constant (k=2.3).