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Characterization of copper voids in dual damascene processes

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6 Author(s)
Guldi, R.L. ; Texas Instrum. Inc., Dallas, TX, USA ; Shaw, J.B. ; Ritchison, J. ; Oestreich, S.
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The introduction of copper dual Damascene processing into integrated circuits has brought about a host of new defectivity issues, especially those related to pitting and voiding. These defects must be understood and eliminated to achieve competitive manufacturing yields and assure device reliability.

Published in:

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Date of Conference:

2002