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Resistivity reliability of tunneling magnetoresistive heads

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5 Author(s)

Summary form only given. The electrical reliability of tunneling magnetoresistive (TMR) read heads has been investigated in terms of breakdown voltage[ 11 and electrical open failures[2] under constant biasing-current. The breakdown voltage is strongly dependent on duration of the applied voltage step, and ambient temperature.

Published in:

Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International

Date of Conference:

April 28 2002-May 2 2002