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Ultra low phase noise sapphire-SiGe HBT oscillator

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6 Author(s)
Llopis, O. ; Lab. d''Autom. et d''Anal. des Syst., CNRS, Toulouse, France ; Cibiel, G. ; Kersale, Y. ; Regis, M.
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A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:12 ,  Issue: 5 )