Cart (Loading....) | Create Account
Close category search window

A future of function or failure? [CMOS gate oxide scaling]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Transistors are scaled in each successive technology generation to increase circuit speed and to improve packing density. However, as the devices get smaller and the gate oxides thinner, ensuring their reliability becomes increasingly difficult. The simple question is: based on the current reliability specifications, will 99.99% of the ICs produced today with given technology remain functional for at least ten years into the future? This is a question that device engineers, circuit designers, and system architects must grapple with as we move into the unknown territory of sub-0.1 μm CMOS technology

Published in:

Circuits and Devices Magazine, IEEE  (Volume:18 ,  Issue: 2 )

Date of Publication:

Mar 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.