Cart (Loading....) | Create Account
Close category search window
 

High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Chen, C.H. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Su, Y.K. ; Chang, S.J. ; Chi, G.C.
more authors

In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA, the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 3 )

Date of Publication:

March 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.