By Topic

Ozone sensing using In2O3-modified Ga2 O3 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. Frank ; Corporate Technol., Siemens AG, Munich, Germany ; A. Fleischer ; A. Zimmer ; H. Meixner

It is shown that at elevated temperatures the conductance of an In 2O3-modified Ga2O3 thin film depends significantly and reversibly on the ozone concentration in the ambient air. This ozone sensitivity is much greater than with pure Ga 2O3 or In2O3 thin films, respectively. The ozone sensitivity of the In2O3-modified Ga2O3 thin film is characterized by an impressive selectivity, and is maximal at an operation temperature of about 600°C. The cross sensitivities to other gases present in ambient conditions are small compared to the ozone sensitivity, thus opening the way to use this system for ambient ozone monitoring. The results are discussed using an electron injection model

Published in:

IEEE Sensors Journal  (Volume:1 ,  Issue: 4 )