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Current status and prospects of ferroelectric random access memories (FeRAMs) are reviewed. First, novel ferroelectric materials, which are suitable for both low temperature crystallization and low voltage operation are introduced. Then, various cell structures in FeRAMs are discussed, in which particular attention is paid to non-destructive-readout-type cells such as a 1T-type cell composed of a single ferroelectric-gate FET. Finally, a novel 1T2C-type non-destructive-readout cell with good data retention characteristic is introduced and its basic operation is presented.