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Reports, for the first time, an extensive experimental characterization of effective mobility (/spl mu//sub eff/) in ultra-thin SOI transistors operated in double gate mode. To this purpose we devised an experimental technique to determine the inversion density (N/sub inv/) and hence /spl mu//sub eff/ in SOI devices biased with arbitrary front- and back-gate voltages. Using this technique, we compared /spl mu//sub eff/ of the same samples biased either in single or double gate mode. For silicon thicknesses (T/sub SI/) of 10 nm and below a modest but unambiguous /spl mu//sub eff/ improvement in the double-gate mode is observed.