Referenced Items are not available for this document.
We have studied the electrical degradation of InAlAs/InGaAs Metamorphic HEMTs. The main effect of the application of a bias for an extended period of time is a severe increase in the drain resistance, R/sub D/, of the device. We have identified two different degradation modes: a reduction in the sheet-electron concentration of the extrinsic drain and an increase of the drain contact resistance. Both mechanisms are found to be directly related to impact-ionization. The metamorphic nature of the substrate does not seem to play a role in the observed degradation.
Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Date of Conference: 2-5 Dec. 2001
- Page(s):
- 9.2.1 - 9.2.4
- Meeting Date :
- 02 Dec 2001-05 Dec 2001
- Print ISBN:
- 0-7803-7050-3
- INSPEC Accession Number:
- 7238944
- Conference Location :
- Washington, DC, USA
- Digital Object Identifier :
- 10.1109/IEDM.2001.979464
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
