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Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors

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2 Author(s)
S. D. Mertens ; MIT, Cambridge, MA, USA ; J. A. del Alamo

We have studied the electrical degradation of InAlAs/InGaAs Metamorphic HEMTs. The main effect of the application of a bias for an extended period of time is a severe increase in the drain resistance, R/sub D/, of the device. We have identified two different degradation modes: a reduction in the sheet-electron concentration of the extrinsic drain and an increase of the drain contact resistance. Both mechanisms are found to be directly related to impact-ionization. The metamorphic nature of the substrate does not seem to play a role in the observed degradation.

Published in:

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Date of Conference:

2-5 Dec. 2001