Referenced Items are not available for this document.
Demonstrated InP-based HEMTs without drain conductance (g/sub d/) frequency dispersion for broadband optical communication systems. It was possible to markedly suppress the g/sub d/ dispersion by using composite channel and double-doped structures rather than a conventional HEMT structure. Furthermore, we clarified that hole generation time by impact ionization determines the frequency range of the g/sub d/ dispersion in a conventional InP-based HEMT by investigating the g/sub d/ dispersion over a wide range of frequencies (100 Hz-20 GHz).
Published in:
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Date of Conference: 2-5 Dec. 2001
- Page(s):
- 9.1.1 - 9.1.4
- Meeting Date :
- 02 Dec 2001-05 Dec 2001
- Print ISBN:
- 0-7803-7050-3
- INSPEC Accession Number:
- 7246499
- Conference Location :
- Washington, DC, USA
- Digital Object Identifier :
- 10.1109/IEDM.2001.979463
- Product Type:
- Conference Publications
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