Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. For technical support, please contact us at We apologize for any inconvenience.
By Topic

MOSFET modeling gets physical

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Miura-Mattausch, M. ; Dept. of Electr. Eng., Hiroshima Univ., Japan ; Mattausch, H.J. ; Arora, N.D. ; Yang, C.Y.

The importance of obtaining a compact analytical MOSFET model with physical model parameters is increasing with the complexity of IC design and by pushing the technology to its limit. Here we have reviewed the known modeling approaches and demonstrated that the surface-potential description based on the drift-diffusion approximation is practical and able to satisfy the foreseeable future requirements. It consequently opens a viable way to secure the robustness and reliability of circuit simulation results for future sub-100 nm MOSFET generations

Published in:

Circuits and Devices Magazine, IEEE  (Volume:17 ,  Issue: 6 )