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Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs

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3 Author(s)
K. Takaoka ; Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan ; M. Ishikawa ; G. Hatakoshi

InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) have been successfully fabricated using the proton-implanted planar structure suitable for mass production. A low threshold current of 2.5 mA with 666-nm lasing wavelength at room temperature and a high maximum continuous wave (CW) lasing temperature of 60°C have been achieved. In addition, it was found that the maximum CW lasing temperature decreased linearly with the increase in the device diameter. This was because the thermal resistance of the device was approximately inversely proportional to the device diameter

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:7 ,  Issue: 2 )