By Topic

Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Osinski, Marek ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; Smagley, Vladimir A. ; Smolyakov, G.A. ; Eliseev, P.G.

A three-dimensional electrical-thermal-optical numerical simulator is developed and applied to model group-III-nitride-based intracavity-contacted vertical-cavity surface-emitting lasers with InGaN multiquantum-well active region. The optical model based on the effective frequency method is combined with an electrical-thermal simulator using the control volume method. Isothermal (pulsed regime imitation) and continuous-wave modes of operation are calculated over a range of voltages, covering subthreshold spontaneous emission and lasing emission. Effects of current crowding at the active region periphery are examined, and in particular, an impact on mode profiles of spatial hole burning superimposed on nonuniform gain distribution is studied. In order to reduce the current crowding and provide more uniform gain distribution within the active region, a semitransparent p-side contact design is proposed

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )