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Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff

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6 Author(s)
Kneissl, Michael ; Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA ; Wong, W.S. ; Treat, David W. ; Teepe, Mark
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The performance characteristics of continuous-wave (CW) InGaN multiple-quantum-well (MQW) laser diodes on copper substrates are reported. InGaN MQW laser diodes (LDs) grown on sapphire substrates by metal-organic chemical vapor deposition were successfully separated from the sapphire and transferred onto copper substrates by using a two-step laser liftoff (LLO) process. Continuous-wave threshold currents as low as 65 mA have been achieved with threshold voltages of 6.5 V with a backside n-contact through the Cu substrate, improved heat dissipation due to the Cu substrate allowed CW laser operation up to a heatsink temperature of 80°C. Significant improvements in light output powers were observed for devices on Cu substrates with maximum CW output power of more than 100 mW

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )