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Over 200-mW operation of single-lateral mode 780-nm laser diodes with window-mirror structure

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7 Author(s)
Kawazu, Z. ; High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan ; Tashiro, Y. ; Shima, A. ; Suzuki, D.
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The high-power operation of the lateral mode stabilized 780-nm AlGaAs laser diode (LD) with the window-mirror structure has been achieved. The stable lateral mode operation up to 250 mW is realized. This is the highest power record among the narrow stripe LDs with the wavelength of 780 nm. This LD is suitable for the next generation high-speed (16-24×) CD-R/RW drives needing 200 mW class LDs

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:7 ,  Issue: 2 )