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Input and reverse transfer capacitance measurement of MOS-gated power transistors under high current flow

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1 Author(s)
C. Deml ; Infineon Technol. AG, Munich, Germany

The measurement principle of the input and reverse transfer capacitance is shown. Function, stability, and operation of the measurement circuits are discussed. The on-state capacitances of a power DMOS transistor were measured under high current conditions of up to 250 A. A strong nonlinear characteristic is observed.

Published in:

IEEE Transactions on Industry Applications  (Volume:37 ,  Issue: 4 )