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Concurrent dual-band CMOS low noise amplifiers and receiver architectures

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2 Author(s)
Hashemi, H. ; Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA ; Hajimiri, A.

A new concurrent dual-band receiver architecture is introduced that is capable of simultaneous operation at two different frequency bands. The concurrent operation results in higher bandwidth, lower total power dissipation and less sensitivity to channel variations. The architecture uses a novel concurrent dual-band low noise amplifier (LNA), combined with an elaborate frequency conversion scheme to reject the image bands. A general methodology for the design of concurrent LNAs is provided that makes it possible to achieve simultaneous narrowband gain and matching at multiple frequencies. The methodology is demonstrated by implementing an integrated dual-band concurrent LNA using 0.35 /spl mu/m CMOS transistors. The LNA provides narrow-band gain and matching at 2.45 GHz and 5.25 GHz bands, simultaneously. It drains 4 mA of current and achieves voltage gains of 14 dB and 15.5 dB, input return losses of 25 dB and 15 dB, and noise figures of 2.3 dB and 4.5 dB at these two bands, respectively.

Published in:

VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on

Date of Conference:

14-16 June 2001