Referenced Items are not available for this document.
We have indicated the necessity for using statistical models to determine the reliability of deep-submicron MOSFETs. We have presented a methodology by which the reliability can be determined from short-time tests if the defect generation statistics are linked to variations in defect activation energies. We have shown that enhanced latent failures follow from our model for deep-submicron MOSFETs. Therefore, more stringent reliability standards are required, which can be validated by the use of short-time tests. Our model provides the means to calculate these novel reliability demands quantitatively.
Published in:
Circuits and Devices Magazine, IEEE
(Volume:17
,
Issue:
3
)
Date of Publication: May 2001
- Page(s):
- 33 - 38
- ISSN :
- 8755-3996
- INSPEC Accession Number:
- 6988256
- Digital Object Identifier :
- 10.1109/101.933789
- Date of Current Version :
- 07 August 2002
- Issue Date :
- May 2001
- Sponsored by :
- IEEE Circuits and Systems Society
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