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Observation of field-induced refractive index variation in quantum box structure

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4 Author(s)
Aizawa, T. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Shimomura, K. ; Arai, S. ; Suematsu, Y.

An electric-field-induced refractive index variation in a GaInAs/InP five-layered quantum box structure was observed for the first time. The wavelength dependence of the refractive index variation was measured to confirm the quantum box effect. The size of the GaInAs/InP quantum box was estimated to be (22-30 nm)/sup 2/ with the thickness of 7.5 nm. from the spectral property of the field-induced refractive index variation. The maximum value of the refractive index variation in the quantum box was evaluated to be 7% around 1.52 mu m wavelength at an applied electric field of 8*10/sup 4/ V/Cm.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 10 )

Date of Publication:

Oct. 1991

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