Cart (Loading....) | Create Account
Close category search window
 

Refractive index change of GaInAs/InP disordered superlattice waveguide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wakatsuki, A. ; Opto-electron. Lab., Atsugi, Japan ; Iwamura, H. ; Suzuki, Y. ; Miyazawa, T.
more authors

The refractive index changes of disordered superlattice waveguides were measured and evaluated. A GaInAs/InP superlattice structure grown by gas-source molecular beam epitaxy (MBE) was disordered by the Si/sub 3/N/sub 4/ cap annealing method. The measurement of the wavelength response of a Bragg grating waveguide shows that the refractive indexes of the disordered region vary gradually in accordance with the development of partial disordering. Maximum refractive index changes were -1.1*10/sup -2/ for the transverse electric mode and +6.7*10/sup -3/ for the transverse magnetic mode at 1.5 mu m wavelength.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 10 )

Date of Publication:

Oct. 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.