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A new self-data-refresh scheme for a sector erasable 16-Mb flash EEPROM

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12 Author(s)
A. Umezawa ; Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan ; S. Atsumi ; M. Kuriyama ; H. Banba
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A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.

Published in:

VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on

Date of Conference:

19-21 May 1993