Sub-1-/spl mu/A dynamic reference voltage generator for battery-operated DRAMs

A new reference voltage generator featuring the dynamic operation of a threshold voltage difference (/spl Delta/V/sub T/) generator and voltage-up converter with current mirror circuits has been proposed. This generator efficiently reduces average current to less than 1 /spl mu/A, while maintaining high-accuracy and high-stability. These performances are enough for realizing high-density battery operated DRAMs with a low active and data-retention current comparable to SRAMs.