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SINIS process development for integrated circuits with characteristic voltages exceeding 250 μV

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4 Author(s)
D. Balashov ; Phys. Tech. Bundesanstalt, Braunschweig, Germany ; M. Khabipov ; F. -I. Buchholz ; J. Niemeyer

At PTB, the fabrication process in Nb-Al/AlxOy /Al/AlxOy/Al-Nb SINIS multilayer technology has been improved to raise the characteristic voltage of SINIS two-tunnel Josephson junctions up to VC=ICRn =245 μV. The process has been realized in LTS implementation. Various sets of the test wafers and wafers containing dc/SFQ and SFQ/dc converters, Josephson transmission lines, and T-flipflop circuits were fabricated and measured. The critical current densities of the junctions have been varied in the range from 70 A/cm2 to 2.2 kA/cm2 with corresponding characteristic voltages of VC =55 μV and 245 μV at the temperature of 4.2 K. The junctions show nearly hysteresis-free behaviour (less than 15%), the intra-wafer parameter spread is smaller than ±10%. RSFQ circuits have been realized with operation margins of the bias currents larger than ±20%

Published in:

IEEE Transactions on Applied Superconductivity  (Volume:11 ,  Issue: 1 )